JPH0136261B2 - - Google Patents
Info
- Publication number
- JPH0136261B2 JPH0136261B2 JP56101575A JP10157581A JPH0136261B2 JP H0136261 B2 JPH0136261 B2 JP H0136261B2 JP 56101575 A JP56101575 A JP 56101575A JP 10157581 A JP10157581 A JP 10157581A JP H0136261 B2 JPH0136261 B2 JP H0136261B2
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- pilot
- emitter
- electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
Landscapes
- Thyristors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56101575A JPS583282A (ja) | 1981-06-30 | 1981-06-30 | サイリスタ |
EP82105664A EP0069308B1 (en) | 1981-06-30 | 1982-06-25 | Thyristor |
DE8282105664T DE3268107D1 (en) | 1981-06-30 | 1982-06-25 | Thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56101575A JPS583282A (ja) | 1981-06-30 | 1981-06-30 | サイリスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS583282A JPS583282A (ja) | 1983-01-10 |
JPH0136261B2 true JPH0136261B2 (en]) | 1989-07-31 |
Family
ID=14304189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56101575A Granted JPS583282A (ja) | 1981-06-30 | 1981-06-30 | サイリスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS583282A (en]) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60106170A (ja) * | 1983-11-15 | 1985-06-11 | Toshiba Corp | 過電圧保護機能付サイリスタ |
JP2609608B2 (ja) * | 1986-09-29 | 1997-05-14 | 株式会社東芝 | 半導体装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2407696C3 (de) * | 1974-02-18 | 1979-02-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
DE2458401C2 (de) * | 1974-12-10 | 1982-06-24 | Siemens AG, 1000 Berlin und 8000 München | Mit Licht steuerbarer Thyristor |
-
1981
- 1981-06-30 JP JP56101575A patent/JPS583282A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS583282A (ja) | 1983-01-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5986260A (ja) | ゲ−トタ−ンオフサイリスタ | |
JPS609671B2 (ja) | 光点弧形サイリスタ | |
US4240091A (en) | Semiconductor controlled rectifier device with small area dV/dt self-protecting means | |
JPH0136261B2 (en]) | ||
JPH0136262B2 (en]) | ||
US4595939A (en) | Radiation-controllable thyristor with multiple, non-concentric amplified stages | |
US4509069A (en) | Light triggerable thyristor with controllable emitter-short circuit and trigger amplification | |
CA1163020A (en) | High voltage semiconductor device having improvements to the dv/dt capability and plasma spreading | |
EP0069308B1 (en) | Thyristor | |
US4908687A (en) | Controlled turn-on thyristor | |
JPH0117269B2 (en]) | ||
US4357621A (en) | Reverse conducting thyristor with specific resistor structures between main cathode and amplifying, reverse conducting portions | |
JPH0136263B2 (en]) | ||
US4296427A (en) | Reverse conducting amplified gate thyristor with plate-like separator section | |
JPS583280A (ja) | サイリスタ | |
US4210924A (en) | Semiconductor controlled rectifier with configured cathode to eliminate hot-spots | |
US4016591A (en) | Semiconductor controlled rectifier | |
JP2740034B2 (ja) | 半導体装置 | |
JP3010603B2 (ja) | 光点弧サイリスタの過電圧保護装置 | |
US4298880A (en) | Power thyristor and method of fabrication therefore utilizing control, generating, and firing gates | |
JP2609608B2 (ja) | 半導体装置 | |
US4622572A (en) | High voltage semiconductor device having an improved DV/DT capability and plasma spreading | |
JPH0222547B2 (en]) | ||
JPH0758777B2 (ja) | ゲートターンオフサイリスタ | |
JPS59159567A (ja) | 光駆動型半導体制御整流装置 |